TK32E12N1,S1X

MOSFET N-Ch 60A 98W FET 120V 2000pF 34nC

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MOSFETs N-Ch 60A 98W FET 120V 2000pF 34nC
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Products specifications

Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	60 A
Vds - Drain-Source Breakdown Voltage	120 V
Technology	Si
Configuration	Single
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Channel Mode	Enhancement
Packaging	Cut Tape, Reel
Rds On - Drain-Source Resistance	11 mOhms
Vgs - Gate-Source Voltage	20 V
Mounting Style	Through Hole
Pd - Power Dissipation	98 W
Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	34 nC

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Products specifications

Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	60 A
Vds - Drain-Source Breakdown Voltage	120 V
Technology	Si
Configuration	Single
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Channel Mode	Enhancement
Packaging	Cut Tape, Reel
Rds On - Drain-Source Resistance	11 mOhms
Vgs - Gate-Source Voltage	20 V
Mounting Style	Through Hole
Pd - Power Dissipation	98 W
Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	34 nC