TK32A12N1,S4X

MOSFET MOSFET NCh11ohm VGS10V10uAVDS120V

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MOSFETs MOSFET NCh11ohm VGS10V10uAVDS120V
Lead Time: 153 Days

Products specifications

Mounting Style	Through Hole
Transistor Polarity	N-Channel
Pd - Power Dissipation	30 W
Channel Mode	Enhancement
Id - Continuous Drain Current	32 A
Vds - Drain-Source Breakdown Voltage	120 V
Configuration	Single
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	34 nC
Number of Channels	1 Channel
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	4 V
Technology	Si
Rds On - Drain-Source Resistance	11 mOhms
Vgs - Gate-Source Voltage	20 V

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Products specifications

Mounting Style	Through Hole
Transistor Polarity	N-Channel
Pd - Power Dissipation	30 W
Channel Mode	Enhancement
Id - Continuous Drain Current	32 A
Vds - Drain-Source Breakdown Voltage	120 V
Configuration	Single
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	34 nC
Number of Channels	1 Channel
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	4 V
Technology	Si
Rds On - Drain-Source Resistance	11 mOhms
Vgs - Gate-Source Voltage	20 V