TK31V60X,LQ

MOSFET DTMOSIV-High Speed 600V 88mVGS=10V)

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MOSFETs DTMOSIV-High Speed 600V 88mVGS=10V)

Products specifications

Rds On - Drain-Source Resistance	78 mOhms
Technology	Si
Qg - Gate Charge	65 nC
Pd - Power Dissipation	240 W
Id - Continuous Drain Current	30.8 A
Vgs - Gate-Source Voltage	30 V
Minimum Operating Temperature	- 55 C
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	3.5 V
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	600 V
Configuration	Triple
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Tradename	DTMOSIV

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Products specifications

Rds On - Drain-Source Resistance	78 mOhms
Technology	Si
Qg - Gate Charge	65 nC
Pd - Power Dissipation	240 W
Id - Continuous Drain Current	30.8 A
Vgs - Gate-Source Voltage	30 V
Minimum Operating Temperature	- 55 C
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	3.5 V
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	600 V
Configuration	Triple
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Tradename	DTMOSIV