TK31N60X,S1F

MOSFET DTMOSIV-H/S 600V 88mOhmmax(VGS=10V)

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30+

120+

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Price

R 105.41

R 79.58

R 74.05

R 73.00

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MOSFETs DTMOSIV-H/S 600V 88mOhmmax(VGS=10V)
Lead Time: 59 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	600 V
Rds On - Drain-Source Resistance	73 mOhms
Tradename	DTMOSIV
Vgs - Gate-Source Voltage	30 V
Id - Continuous Drain Current	30.8 A
Mounting Style	Through Hole
Configuration	Single
Qg - Gate Charge	65 nC
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Pd - Power Dissipation	230 W
Technology	Si
Packaging	Cut Tape, Reel
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	3.5 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C

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Products specifications

Vds - Drain-Source Breakdown Voltage	600 V
Rds On - Drain-Source Resistance	73 mOhms
Tradename	DTMOSIV
Vgs - Gate-Source Voltage	30 V
Id - Continuous Drain Current	30.8 A
Mounting Style	Through Hole
Configuration	Single
Qg - Gate Charge	65 nC
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Pd - Power Dissipation	230 W
Technology	Si
Packaging	Cut Tape, Reel
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	3.5 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C