TK31N60W,S1VF

MOSFET DTMOSIV 600V 88mOhm 30.8A 230W 3000pF

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MOSFETs DTMOSIV 600V 88mOhm 30.8A 230W 3000pF
Lead Time: 29 Days

Products specifications

Qg - Gate Charge	86 nC
Vgs - Gate-Source Voltage	30 V
Vgs th - Gate-Source Threshold Voltage	3.7 V
Id - Continuous Drain Current	30.8 A
Rds On - Drain-Source Resistance	73 mOhms
Mounting Style	Through Hole
Technology	Si
Pd - Power Dissipation	230 W
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Transistor Polarity	N-Channel
Tradename	DTMOSIV
Number of Channels	1 Channel

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Products specifications

Qg - Gate Charge	86 nC
Vgs - Gate-Source Voltage	30 V
Vgs th - Gate-Source Threshold Voltage	3.7 V
Id - Continuous Drain Current	30.8 A
Rds On - Drain-Source Resistance	73 mOhms
Mounting Style	Through Hole
Technology	Si
Pd - Power Dissipation	230 W
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Transistor Polarity	N-Channel
Tradename	DTMOSIV
Number of Channels	1 Channel