TK31J60W,S1VQ

MOSFET N-Ch 30.8A 230W FET 600V 3000pF 86nC

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R 129.39

R 127.02

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MOSFETs N-Ch 30.8A 230W FET 600V 3000pF 86nC

Products specifications

Vgs - Gate-Source Voltage	10 V
Tradename	DTMOSIV
Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Number of Channels	1 Channel
Id - Continuous Drain Current	30.8 A
Qg - Gate Charge	105 nC
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	88 mOhms
Pd - Power Dissipation	230 W
Technology	Si
Mounting Style	Through Hole

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Products specifications

Vgs - Gate-Source Voltage	10 V
Tradename	DTMOSIV
Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Number of Channels	1 Channel
Id - Continuous Drain Current	30.8 A
Qg - Gate Charge	105 nC
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	88 mOhms
Pd - Power Dissipation	230 W
Technology	Si
Mounting Style	Through Hole