TK31J60W5,S1VQ

MOSFET N-Ch 30.8A 230W FET 600V 3000pF 105nC

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MOSFETs N-Ch 30.8A 230W FET 600V 3000pF 105nC

Products specifications

Configuration	Single
Pd - Power Dissipation	230 W
Vgs th - Gate-Source Threshold Voltage	3.7 V
Channel Mode	Enhancement
Id - Continuous Drain Current	30.8 A
Rds On - Drain-Source Resistance	73 mOhms
Transistor Polarity	N-Channel
Qg - Gate Charge	86 nC
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Tradename	DTMOSIV
Mounting Style	Through Hole
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	30 V
Vds - Drain-Source Breakdown Voltage	600 V
Technology	Si

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Products specifications

Configuration	Single
Pd - Power Dissipation	230 W
Vgs th - Gate-Source Threshold Voltage	3.7 V
Channel Mode	Enhancement
Id - Continuous Drain Current	30.8 A
Rds On - Drain-Source Resistance	73 mOhms
Transistor Polarity	N-Channel
Qg - Gate Charge	86 nC
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Tradename	DTMOSIV
Mounting Style	Through Hole
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	30 V
Vds - Drain-Source Breakdown Voltage	600 V
Technology	Si