TK31E60X,S1X

MOSFET DTMOSIV-High Speed 600V 88m (VGS=10V)

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MOSFETs DTMOSIV-High Speed 600V 88m (VGS=10V)
Lead Time: 137 Days

Products specifications

Vgs th - Gate-Source Threshold Voltage	3.5 V
Id - Continuous Drain Current	7.7 A
Configuration	Single
Mounting Style	Through Hole
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	73 mOhms
Transistor Polarity	N-Channel
Qg - Gate Charge	65 nC
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Tradename	DTMOSIV
Vgs - Gate-Source Voltage	30 V
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	600 V
Technology	Si
Pd - Power Dissipation	230 W

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Products specifications

Vgs th - Gate-Source Threshold Voltage	3.5 V
Id - Continuous Drain Current	7.7 A
Configuration	Single
Mounting Style	Through Hole
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	73 mOhms
Transistor Polarity	N-Channel
Qg - Gate Charge	65 nC
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Tradename	DTMOSIV
Vgs - Gate-Source Voltage	30 V
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	600 V
Technology	Si
Pd - Power Dissipation	230 W