TK31E60W,S1VX

MOSFET N-Ch 30.8A 290W FET 600V 3000pF 86nC

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MOSFETs N-Ch 30.8A 290W FET 600V 3000pF 86nC
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Products specifications

Number of Channels	1 Channel
Technology	Si
Channel Mode	Enhancement
Pd - Power Dissipation	230 W
Minimum Operating Temperature	- 55 C
Tradename	DTMOSIV
Vgs th - Gate-Source Threshold Voltage	3.7 V
Id - Continuous Drain Current	30.8 A
Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Qg - Gate Charge	86 nC
Rds On - Drain-Source Resistance	73 mOhms
Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Voltage	30 V

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Products specifications

Number of Channels	1 Channel
Technology	Si
Channel Mode	Enhancement
Pd - Power Dissipation	230 W
Minimum Operating Temperature	- 55 C
Tradename	DTMOSIV
Vgs th - Gate-Source Threshold Voltage	3.7 V
Id - Continuous Drain Current	30.8 A
Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Qg - Gate Charge	86 nC
Rds On - Drain-Source Resistance	73 mOhms
Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Voltage	30 V