TK31A60W,S4VX

MOSFET N-Ch 30.8A 45W FET 600V 3000pF 86nC

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MOSFETs N-Ch 30.8A 45W FET 600V 3000pF 86nC
Lead Time: 43 Days

Products specifications

Transistor Polarity	N-Channel
Technology	Si
Number of Channels	1 Channel
Pd - Power Dissipation	45 W
Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Minimum Operating Temperature	- 55 C
Channel Mode	Enhancement
Id - Continuous Drain Current	30.8 A
Vgs - Gate-Source Voltage	30 V
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	73 mOhms
Mounting Style	Through Hole
Vgs th - Gate-Source Threshold Voltage	3.7 V
Qg - Gate Charge	86 nC

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Products specifications

Transistor Polarity	N-Channel
Technology	Si
Number of Channels	1 Channel
Pd - Power Dissipation	45 W
Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Minimum Operating Temperature	- 55 C
Channel Mode	Enhancement
Id - Continuous Drain Current	30.8 A
Vgs - Gate-Source Voltage	30 V
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	73 mOhms
Mounting Style	Through Hole
Vgs th - Gate-Source Threshold Voltage	3.7 V
Qg - Gate Charge	86 nC