TK30A06N1,S4X

MOSFET MOSFET NCh11.5ohm VGS10V 10uA VDS60V

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MOSFETs MOSFET NCh11.5ohm VGS10V 10uA VDS60V
Lead Time: 111 Days

Products specifications

Rds On - Drain-Source Resistance	12.2 mOhms
Minimum Operating Temperature	- 55 C
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel
Pd - Power Dissipation	25 W
Configuration	Single
Number of Channels	1 Channel
Technology	Si
Mounting Style	Through Hole
Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	16 nC
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	20 V
Id - Continuous Drain Current	30 A

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Products specifications

Rds On - Drain-Source Resistance	12.2 mOhms
Minimum Operating Temperature	- 55 C
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel
Pd - Power Dissipation	25 W
Configuration	Single
Number of Channels	1 Channel
Technology	Si
Mounting Style	Through Hole
Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	16 nC
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	20 V
Id - Continuous Drain Current	30 A