TK2Q60D(Q)

MOSFET N-Ch MOS 2A 600V 60W 280pF 4.3 Ohm

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MOSFETs N-Ch MOS 2A 600V 60W 280pF 4.3 Ohm
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Products specifications

Vgs th - Gate-Source Threshold Voltage	2.4 V
Channel Mode	Enhancement
Id - Continuous Drain Current	2 A
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	600 V
Minimum Operating Temperature	- 55 C
Configuration	Single
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Packaging	Cut Tape, Reel
Technology	Si
Pd - Power Dissipation	60 W
Qg - Gate Charge	7 nC
Vgs - Gate-Source Voltage	30 V
Rds On - Drain-Source Resistance	4.3 Ohms

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Products specifications

Vgs th - Gate-Source Threshold Voltage	2.4 V
Channel Mode	Enhancement
Id - Continuous Drain Current	2 A
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	600 V
Minimum Operating Temperature	- 55 C
Configuration	Single
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Packaging	Cut Tape, Reel
Technology	Si
Pd - Power Dissipation	60 W
Qg - Gate Charge	7 nC
Vgs - Gate-Source Voltage	30 V
Rds On - Drain-Source Resistance	4.3 Ohms