MOSFET N-Ch TT-MOSVIII 900V 80W 500pF 2A
Products specifications
Technology | Si |
Transistor Polarity | N-Channel |
Packaging | Cut Tape, MouseReel, Reel |
Maximum Operating Temperature | + 150 C |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 900 V |
Vgs - Gate-Source Voltage | 30 V |
Pd - Power Dissipation | 80 W |
Configuration | Single |
Qg - Gate Charge | 12 nC |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Minimum Operating Temperature | - |
Channel Mode | Enhancement |
Tradename | DTMOSIV |
Id - Continuous Drain Current | 2 A |
Rds On - Drain-Source Resistance | 4.7 Ohms |