TK2A65D(STA4,Q,M)

MOSFET N-Ch MOS 2A 650V 30W 380pF 3.26

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MOSFETs N-Ch MOS 2A 650V 30W 380pF 3.26
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Products specifications

Id - Continuous Drain Current	2 A
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	650 V
Pd - Power Dissipation	30 W
Configuration	Single
Rds On - Drain-Source Resistance	3.26 Ohms
Technology	Si

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Products specifications

Id - Continuous Drain Current	2 A
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	650 V
Pd - Power Dissipation	30 W
Configuration	Single
Rds On - Drain-Source Resistance	3.26 Ohms
Technology	Si