MOSFET N-Ch DTMOSV 650V 100W 730pF 11.5A
Products specifications
Tradename | DTMOSV |
Vds - Drain-Source Breakdown Voltage | 600 V |
Vgs - Gate-Source Voltage | 30 V |
Pd - Power Dissipation | 100 W |
Number of Channels | 1 Channel |
Packaging | Cut Tape, Reel |
Technology | Si |
Id - Continuous Drain Current | 11.5 A |
Configuration | Single |
Qg - Gate Charge | 25 nC |
Minimum Operating Temperature | - |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 230 mOhms |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Maximum Operating Temperature | + 150 C |