MOSFET N-Ch DTMOSV 650V 35W 730pF 11.5A
Products specifications
Tradename | DTMOSV |
Packaging | Tube |
Technology | Si |
Minimum Operating Temperature | - |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Rds On - Drain-Source Resistance | 230 mOhms |
Maximum Operating Temperature | + 150 C |
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |
Vgs - Gate-Source Voltage | 30 V |
Number of Channels | 1 Channel |
Qg - Gate Charge | 25 nC |
Id - Continuous Drain Current | 11.5 A |
Configuration | Single |
Pd - Power Dissipation | 35 W |
Vds - Drain-Source Breakdown Voltage | 650 V |
Channel Mode | Enhancement |