MOSFET Power MOSFET N-Channel
Products specifications
Vds - Drain-Source Breakdown Voltage | 650 V |
Mounting Style | Through Hole |
Configuration | Single |
Pd - Power Dissipation | 230 W |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 27.6 A |
Rds On - Drain-Source Resistance | 94 mOhms |
Technology | Si |
Maximum Operating Temperature | + 150 C |
Packaging | Tube |
Minimum Operating Temperature | - 55 C |
Number of Channels | 1 Channel |
Channel Mode | Enhancement |
Vgs - Gate-Source Voltage | 30 V |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Qg - Gate Charge | 75 nC |