MOSFET Power MOSFET N-Channel
Products specifications
Channel Mode | Enhancement |
Technology | Si |
Rds On - Drain-Source Resistance | 105 mOhms |
Id - Continuous Drain Current | 25 A |
Qg - Gate Charge | 40 nC |
Number of Channels | 1 Channel |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Tradename | DTMOSIV |
Pd - Power Dissipation | 180 W |
Minimum Operating Temperature | - 55 C |
Mounting Style | Through Hole |
Maximum Operating Temperature | + 150 C |
Configuration | Single |
Packaging | Tube |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 600 V |
Vgs - Gate-Source Voltage | 30 V |