MOSFET Power MOSFET N-Channel
Products specifications
Transistor Polarity | N-Channel |
Pd - Power Dissipation | 180 W |
Id - Continuous Drain Current | 25 A |
Technology | Si |
Number of Channels | 1 Channel |
Tradename | DTMOSIV |
Packaging | Tube |
Configuration | Single |
Rds On - Drain-Source Resistance | 120 mOhms |
Vds - Drain-Source Breakdown Voltage | 600 V |
Channel Mode | Enhancement |
Mounting Style | Through Hole |
Vgs - Gate-Source Voltage | 30 V |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Qg - Gate Charge | 60 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |