TK25E06K3,S1X(S

R 1.00

MOSFET N-Ch 60V 25A Rdson 0.046 Ohm

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MOSFET N-Ch 60V 25A Rdson 0.046 Ohm

Products specifications

Rds On - Drain-Source Resistance	14 Ohms
Technology	Si
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	60 V
Tradename	DTMOSIV
Pd - Power Dissipation	60 W
Qg - Gate Charge	29 nC
Id - Continuous Drain Current	25 A
Configuration	Single
Transistor Polarity	N-Channel
Number of Channels	1 Channel

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Products specifications

Rds On - Drain-Source Resistance	14 Ohms
Technology	Si
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	60 V
Tradename	DTMOSIV
Pd - Power Dissipation	60 W
Qg - Gate Charge	29 nC
Id - Continuous Drain Current	25 A
Configuration	Single
Transistor Polarity	N-Channel
Number of Channels	1 Channel