MOSFET MOSFET NCh12.2ohm 10V 10uA VDS100V
Products specifications
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Maximum Operating Temperature | + 150 C |
Rds On - Drain-Source Resistance | 11.5 mOhms |
Vds - Drain-Source Breakdown Voltage | 100 V |
Configuration | Single |
Id - Continuous Drain Current | 22 A |
Channel Mode | Enhancement |
Pd - Power Dissipation | 30 W |
Minimum Operating Temperature | - 55 C |
Qg - Gate Charge | 28 nC |
Vgs - Gate-Source Voltage | 20 V |
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |