MOSFET Power MOSFET N-Channel
Products specifications
Vgs - Gate-Source Voltage | 30 V |
Technology | Si |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 600 V |
Configuration | Single |
Pd - Power Dissipation | 156 W |
Channel Mode | Enhancement |
Qg - Gate Charge | 55 nC |
Rds On - Drain-Source Resistance | 156 mOhms |
Packaging | Cut Tape, MouseReel, Reel |
Tradename | DTMOSIV |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Id - Continuous Drain Current | 20 A |