MOSFET Power MOSFET N-Channel
Products specifications
Pd - Power Dissipation | 165 W |
Qg - Gate Charge | 55 nC |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 30 V |
Vds - Drain-Source Breakdown Voltage | 600 V |
Channel Mode | Enhancement |
Configuration | Single |
Id - Continuous Drain Current | 20 A |
Technology | Si |
Packaging | Tube |
Minimum Operating Temperature | - 55 C |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Tradename | DTMOSIV |
Mounting Style | Through Hole |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Rds On - Drain-Source Resistance | 150 mOhms |