MOSFET MOSFET DTMOS-II N-Ch 600V 20A
Products specifications
Vds - Drain-Source Breakdown Voltage | 600 V |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 150 C |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Configuration | Single |
Id - Continuous Drain Current | 20 A |
Vgs - Gate-Source Voltage | 30 V |
Technology | Si |
Packaging | Tube |
Minimum Operating Temperature | - 55 C |
Pd - Power Dissipation | 190 W |
Mounting Style | Through Hole |
Rds On - Drain-Source Resistance | 190 mOhms |