MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A
Products specifications
Technology | Si |
Tradename | DTMOSIV |
Rds On - Drain-Source Resistance | 130 mOhms |
Transistor Polarity | N-Channel |
Qg - Gate Charge | 48 nC |
Id - Continuous Drain Current | 20 A |
Vgs th - Gate-Source Threshold Voltage | 3.7 V |
Vgs - Gate-Source Voltage | 30 V |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Channel Mode | Enhancement |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 600 V |
Pd - Power Dissipation | 165 W |
Configuration | Single |