MOSFET MOSFET NChtrr100ns 0.25ohm DTMOS
Products specifications
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 600 V |
Qg - Gate Charge | 55 nC |
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 150 mOhms |
Minimum Operating Temperature | - 55 C |
Vgs - Gate-Source Voltage | 30 V |
Maximum Operating Temperature | + 150 C |
Transistor Polarity | N-Channel |
Tradename | DTMOSIV |
Mounting Style | Through Hole |
Channel Mode | Enhancement |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 4.5 V |
Id - Continuous Drain Current | 20 A |
Pd - Power Dissipation | 45 W |