MOSFET N-Ch FET 600V 12s IDSS 100 uA
Products specifications
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |
Vgs th - Gate-Source Threshold Voltage | 5 V |
Number of Channels | 1 Channel |
Qg - Gate Charge | 27 nC |
Pd - Power Dissipation | 45 W |
Rds On - Drain-Source Resistance | 190 mOhms |
Tradename | DTMOSIV |
Id - Continuous Drain Current | 20 A |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 600 V |
Technology | Si |