MOSFET MOSFET DTMOS-II N-CH 600V, 20A
Products specifications
Vgs - Gate-Source Voltage | 30 V |
Technology | Si |
Mounting Style | Through Hole |
Configuration | Single |
Id - Continuous Drain Current | 20 A |
Number of Channels | 1 Channel |
Tradename | DTMOSIV |
Packaging | Tray |
Pd - Power Dissipation | 45 W |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 600 V |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 190 mOhms |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |