MOSFET N-Ch TT-MOSIX 600V 30W 490pF 3.7A
Products specifications
Maximum Operating Temperature | + 150 C |
Packaging | Tube |
Rds On - Drain-Source Resistance | 1.9 Ohms |
Qg - Gate Charge | 14 nC |
Channel Mode | Enhancement |
Vgs - Gate-Source Voltage | 30 V |
Id - Continuous Drain Current | 3.7 A |
Technology | Si |
Minimum Operating Temperature | - |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 600 V |
Transistor Polarity | N-Channel |
Configuration | Single |
Mounting Style | Through Hole |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Pd - Power Dissipation | 30 W |