MOSFET N-Ch TT-MOSIX 600V 35W 740pF 6A
Products specifications
Transistor Polarity | N-Channel |
Vgs - Gate-Source Voltage | 30 V |
Qg - Gate Charge | 21 nC |
Technology | Si |
Rds On - Drain-Source Resistance | 1.2 Ohms |
Id - Continuous Drain Current | 6 A |
Mounting Style | Through Hole |
Packaging | Tube |
Pd - Power Dissipation | 35 W |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Number of Channels | 1 Channel |
Channel Mode | Enhancement |
Configuration | Single |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - |
Vds - Drain-Source Breakdown Voltage | 600 V |