TK19A45D(STA4,Q,M)

R 1.00

MOSFET N-Ch MOS 19A 450V 50W 2600pF 0.25

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MOSFET N-Ch MOS 19A 450V 50W 2600pF 0.25

Products specifications

Vds - Drain-Source Breakdown Voltage	450 V
Configuration	Single
Technology	Si
Pd - Power Dissipation	50 W
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	250 mOhms
Mounting Style	Through Hole
Id - Continuous Drain Current	19 A
Number of Channels	1 Channel

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Products specifications

Vds - Drain-Source Breakdown Voltage	450 V
Configuration	Single
Technology	Si
Pd - Power Dissipation	50 W
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	250 mOhms
Mounting Style	Through Hole
Id - Continuous Drain Current	19 A
Number of Channels	1 Channel