MOSFET N-Ch MOS 17A 650V 190W 1450pF 0.26
Products specifications
Configuration | Single |
Packaging | Tube |
Vds - Drain-Source Breakdown Voltage | 650 V |
Mounting Style | Through Hole |
Id - Continuous Drain Current | 17 A |
Rds On - Drain-Source Resistance | 260 mOhms |
Technology | Si |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Pd - Power Dissipation | 190 W |