MOSFET Power MOSFET N-Channel
Products specifications
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |
Technology | Si |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 650 V |
Pd - Power Dissipation | 165 W |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Qg - Gate Charge | 45 nC |
Id - Continuous Drain Current | 17.3 A |
Rds On - Drain-Source Resistance | 170 mOhms |
Tradename | DTMOSIV |
Vgs - Gate-Source Voltage | 30 V |
Number of Channels | 1 Channel |
Mounting Style | Through Hole |
Packaging | Tube |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |