MOSFET N-Ch 800V 2050pF 32nC 17A 45W
Products specifications
Tradename | DTMOSIV |
Vds - Drain-Source Breakdown Voltage | 800 V |
Rds On - Drain-Source Resistance | 250 mOhms |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 45 W |
Technology | Si |
Number of Channels | 1 Channel |
Id - Continuous Drain Current | 17 A |
Vgs - Gate-Source Voltage | 20 V |
Configuration | Single |
Mounting Style | Through Hole |
Packaging | Tube |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Qg - Gate Charge | 32 nC |
Vgs th - Gate-Source Threshold Voltage | 3 V |