MOSFET DTMOSIV 600V 190mOhm 15.8A 130W 1350pF
Products specifications
Pd - Power Dissipation | 130 W |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 3.7 V |
Qg - Gate Charge | 38 nC |
Packaging | Cut Tape, MouseReel, Reel |
Number of Channels | 1 Channel |
Id - Continuous Drain Current | 15.8 A |
Vgs - Gate-Source Voltage | 30 V |
Configuration | Single |
Tradename | DTMOSIV |
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 600 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Rds On - Drain-Source Resistance | 190 mOhms |