MOSFET N-Ch 15.8A 130W FET 600V 1350pF 38nC
Products specifications
Minimum Operating Temperature | - 55 C |
Vds - Drain-Source Breakdown Voltage | 600 V |
Configuration | Single |
Channel Mode | Enhancement |
Vgs - Gate-Source Voltage | 30 V |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 130 W |
Qg - Gate Charge | 30 nC |
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 160 mOhms |
Transistor Polarity | N-Channel |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 3.7 V |
Mounting Style | Through Hole |
Id - Continuous Drain Current | 15.8 A |