MOSFET N-Ch 600V 15.8A 40W DTMOSIV 1350pF 38nC
Products specifications
Channel Mode | Enhancement |
Vds - Drain-Source Breakdown Voltage | 600 V |
Pd - Power Dissipation | 40 W |
Qg - Gate Charge | 38 nC |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vgs th - Gate-Source Threshold Voltage | 3.7 V |
Id - Continuous Drain Current | 15.8 A |
Technology | Si |
Configuration | Single |
Rds On - Drain-Source Resistance | 160 mOhms |
Tradename | DTMOSIV |
Vgs - Gate-Source Voltage | 30 V |