TK16A60W5,S4VX

R 1.00

MOSFET N-Ch 15.8A 40W FET 600V 1350pF 43nC

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MOSFET N-Ch 15.8A 40W FET 600V 1350pF 43nC

Products specifications

Mounting Style	Through Hole
Technology	Si
Qg - Gate Charge	43 nC
Pd - Power Dissipation	40 W
Rds On - Drain-Source Resistance	190 mOhms
Vds - Drain-Source Breakdown Voltage	600 V
Configuration	Single
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Id - Continuous Drain Current	15.8 A
Tradename	DTMOSIV

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Products specifications

Mounting Style	Through Hole
Technology	Si
Qg - Gate Charge	43 nC
Pd - Power Dissipation	40 W
Rds On - Drain-Source Resistance	190 mOhms
Vds - Drain-Source Breakdown Voltage	600 V
Configuration	Single
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Id - Continuous Drain Current	15.8 A
Tradename	DTMOSIV