MOSFET U-MOSVIII-H 100V 160A 122nC MOSFET
Products specifications
Pd - Power Dissipation | 375 W |
Minimum Operating Temperature | - |
Channel Mode | Enhancement |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Packaging | Cut Tape, Reel |
Number of Channels | 1 Channel |
Maximum Operating Temperature | + 175 C |
Rds On - Drain-Source Resistance | 2 mOhms |
Qg - Gate Charge | 122 nC |
Configuration | Single |
Transistor Polarity | N-Channel |
Vgs - Gate-Source Voltage | 20 V |
Id - Continuous Drain Current | 160 A |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 100 V |