MOSFET UMOSVIII 40V 17.8m max(VGS=10V) DPAK
Products specifications
Configuration | Single |
Pd - Power Dissipation | 40 W |
Channel Mode | Enhancement |
Minimum Operating Temperature | - 55 C |
Number of Channels | 1 Channel |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Vds - Drain-Source Breakdown Voltage | 40 V |
Maximum Operating Temperature | + 175 C |
Rds On - Drain-Source Resistance | 13.7 mOhms |
Qg - Gate Charge | 10 nC |
Packaging | Cut Tape, MouseReel, Reel |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 15 A |
Vgs - Gate-Source Voltage | 20 V |