MOSFET MOSFET DTMOS-II N-Ch 600V 15A
Products specifications
Technology | Si |
Channel Mode | Enhancement |
Mounting Style | Through Hole |
Vgs - Gate-Source Voltage | 30 V |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Pd - Power Dissipation | 170 W |
Rds On - Drain-Source Resistance | 300 mOhms |
Vds - Drain-Source Breakdown Voltage | 600 V |
Packaging | Tube |
Configuration | Single |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Id - Continuous Drain Current | 15 A |