MOSFET N-Ch MOS 15A 600V 170W 950pF 0.3
Products specifications
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 600 V |
Configuration | Single |
Rds On - Drain-Source Resistance | 300 mOhms |
Packaging | Tube |
Technology | Si |
Id - Continuous Drain Current | 15 A |
Pd - Power Dissipation | 170 W |