MOSFET MOSFET NChannel 0.22ohm DTMOS
Products specifications
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 650 V |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 13.7 A |
Rds On - Drain-Source Resistance | 220 mOhms |
Pd - Power Dissipation | 40 W |
Maximum Operating Temperature | + 150 C |
Technology | Si |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vgs - Gate-Source Voltage | 30 V |
Tradename | DTMOSIV |
Minimum Operating Temperature | - 55 C |
Mounting Style | Through Hole |
Qg - Gate Charge | 35 nC |
Vgs th - Gate-Source Threshold Voltage | 3.5 V |