MOSFET MOSFET NCh trr100 nsn 0.25ohm DTMOS
Products specifications
Rds On - Drain-Source Resistance | 250 mOhms |
Tradename | DTMOSIV |
Id - Continuous Drain Current | 13.7 A |
Vds - Drain-Source Breakdown Voltage | 650 V |
Pd - Power Dissipation | 40 W |
Configuration | Single |
Vgs th - Gate-Source Threshold Voltage | 4.5 V |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 150 C |
Number of Channels | 1 Channel |
Minimum Operating Temperature | - 55 C |
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |
Qg - Gate Charge | 40 nC |
Vgs - Gate-Source Voltage | 30 V |
Technology | Si |