MOSFET N-Ch MOS 13A 650V 170W 950pF 0.38
Products specifications
Packaging | Tube |
Minimum Operating Temperature | - 55 C |
Configuration | Single |
Number of Channels | 1 Channel |
Technology | Si |
Mounting Style | Through Hole |
Channel Mode | Enhancement |
Pd - Power Dissipation | 170 W |
Id - Continuous Drain Current | 13 A |
Maximum Operating Temperature | + 150 C |
Qg - Gate Charge | 17 nC |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 650 V |
Rds On - Drain-Source Resistance | 380 mOhms |