MOSFET N-Ch FET RDS .32Ohm Yfs 8.0s VDS 650V
Products specifications
Technology | Si |
Configuration | Single |
Mounting Style | Through Hole |
Rds On - Drain-Source Resistance | 380 mOhms |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 650 V |
Id - Continuous Drain Current | 13 A |