MOSFET N-Ch RDS 0.33 Ohm Yfs 6.5s 10uA 600V
Products specifications
Vgs th - Gate-Source Threshold Voltage | 2 V |
Vds - Drain-Source Breakdown Voltage | 600 V |
Maximum Operating Temperature | + 150 C |
Technology | Si |
Vgs - Gate-Source Voltage | 10 V |
Pd - Power Dissipation | 50 W |
Packaging | Cut Tape, MouseReel, Reel |
Id - Continuous Drain Current | 13 A |
Channel Mode | Enhancement |
Configuration | Single |
Rds On - Drain-Source Resistance | 430 mOhms |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Qg - Gate Charge | 40 nC |
Mounting Style | Through Hole |