MOSFET N-Ch MOS 12.5A 550V 45W 1800pF 0.48
Products specifications
Rds On - Drain-Source Resistance | 480 mOhms |
Vds - Drain-Source Breakdown Voltage | 550 V |
Technology | Si |
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Id - Continuous Drain Current | 13.5 A |
Configuration | Single |
Pd - Power Dissipation | 45 W |