MOSFET DTMOSIV 600V 340mOhm 115A 100W 890pF 25nC
Products specifications
Vgs - Gate-Source Voltage | 30 V |
Configuration | Single |
Id - Continuous Drain Current | 11.5 A |
Vds - Drain-Source Breakdown Voltage | 600 V |
Pd - Power Dissipation | 100 W |
Packaging | Reel |
Vgs th - Gate-Source Threshold Voltage | 3.7 V |
Number of Channels | 1 Channel |
Technology | Si |
Minimum Operating Temperature | - 55 C |
Rds On - Drain-Source Resistance | 340 mOhms |
Qg - Gate Charge | 25 nC |
Tradename | DTMOSIV |
Transistor Polarity | N-Channel |
Maximum Operating Temperature | + 150 C |