MOSFET MOSFET DTMOS-II N-Ch 600V 12A
Products specifications
Technology | Si |
Minimum Operating Temperature | - 55 C |
Id - Continuous Drain Current | 12 A |
Number of Channels | 1 Channel |
Packaging | Tube |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |
Mounting Style | Through Hole |
Maximum Operating Temperature | + 150 C |
Rds On - Drain-Source Resistance | 400 mOhms |
Vds - Drain-Source Breakdown Voltage | 600 V |
Configuration | Single |
Vgs - Gate-Source Voltage | 30 V |
Pd - Power Dissipation | 144 W |